Band gap of wurtzite GaAs: A resonant Raman study
نویسندگان
چکیده
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zincblende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV± 3meV at room temperature, and 35± 3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of heavy 9 and light-hole 7 band at the point of 65± 6meV.
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